Design and Investigation of a Dual Material Gate Arsenic Alloy Heterostructure Junctionless TFET with a Lightly Doped Source
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Applied Sciences
سال: 2019
ISSN: 2076-3417
DOI: 10.3390/app9194104